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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PMR370XN

N-channel TrenchMOS extremely low level FET

Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

此產品已停產

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Saves PCB space due to small footprint (63 % smaller than SOT23)
  • Suitable for low gate drive sources

Applications

  • Driver circuits
  • Switching in portable appliances

參數類型

型號 Package version Package name Product status Channel type Nr of transistors Automotive qualified Release date
PMR370XN SOT416 SC-75 End of life N 1 N 2011-01-24

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
PMR370XN PMR370XN,115
(934057957115)		 Obsolete SOT416
SC-75
(SOT416) 		SOT416 SOT416_115

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PMR370XN PMR370XN,115 PMR370XN rohs rhf rhf
品質及可靠性免責聲明

文檔 (13)

文件名稱 標題 類型 日期
PMR370XN N-channel uTrenchmos (tm) extremely low level FET Data sheet 2004-03-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
PMR370XN_10_08_2011 PMR370XN_10_08_2011 Spice parameter SPICE model 2011-09-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
PMR370XN_10_08_2011 PMR370XN_10_08_2011 Spice parameter SPICE model 2011-09-12

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.