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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PMZB670UPE

20 V, single P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

不建議用在新設計中(NRND)。

Features and benefits

  • Very fast switching

  • Low threshold voltage

  • Trench MOSFET technology

  • ESD protection up to 2 kV

  • Ultra thin package profile of 0.37 mm

Applications

  • Relay driver

  • High-speed line driver

  • High-side load switch

  • Switching circuits

參數類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMZB670UPE
SOT883B DFN1006B-3 Not for design in P 1 -20 8 850 1500 150 -0.68 0.18 0.76 0.36 -0.9 N 58 21 2012-02-01

封裝

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
PMZB670UPE
PMZB670UPE,315
(934065872315)		 Active 0000 1011 SOT883B
DFN1006B-3
(SOT883B) 		SOT883B REFLOW_BG-BD-1
SOT883B_315

環境信息

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PMZB670UPE
PMZB670UPE,315 PMZB670UPE rohs rhf rhf
品質及可靠性免責聲明

文檔 (17)

文件名稱 標題 類型 日期
PMZB670UPE 20 V, single P-channel Trench MOSFET Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT883B 3D model for products with SOT883B package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN1006B-3_SOT883B_mk plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1 mm x 0.6 mm x 0.37 mm body Marcom graphics 2017-01-28
SOT883B plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body Package information 2022-05-20
SOT883B_315 DFN1006B-3; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2020-06-12
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMZB670UPE_06_02_2012 PMZB670UPE.06_02_2012 Spice parameter SPICE model 2012-04-16
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
PMZB670UPE_06_02_2012 PMZB670UPE.06_02_2012 Spice parameter SPICE model 2012-04-16
SOT883B 3D model for products with SOT883B package Design support 2020-01-22

訂購、定價與供貨

型號 Orderable part number Ordering code (12NC) 狀態 包裝 Packing Quantity 在線購買
PMZB670UPE PMZB670UPE,315 934065872315 Active SOT883B_315 10,000 訂單產品

樣品

作為 Nexperia 的客戶，您可以通過我們的銷售機構訂購樣品。

如果您沒有 Nexperia 的直接賬戶，我們的全球和地區分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經銷商處購買
PMZB670UPE PMZB670UPE,315 934065872315 SOT883B 訂單產品