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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PSMN011-100YSF

NextPower 100V, 10.9 mΩ N-channel MOSFET in LFPAK56 package

NextPower 100V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Low Qrr for higher efficiency and lower spiking

  • Qualified to 175 °C

  • Low QG x RDSon FOM for high efficiency switching applications

  • Strong avalanche energy rating (Eas)

  • Avalanche rated and 100% tested

  • Ha-free and RoHS compliant LFPAK56 package

  • Wave-solderable LFPAK56 package

  • Low-stress LFPAK leadframe for high-reliability applications

Applications

  • Synchronous rectifier in AC-DC and DC-DC

  • BLDC motor control

  • USB-PD and mobile fast-charge adapters

  • LED lighting

  • Full-bridge and half-bridge applications

  • Flyback and resonant topologies

參數(shù)類型

型號(hào) Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN011-100YSF SOT669 LFPAK56; Power-SO8 End of life N 1 100 10.9 175 79.5 8.1 34.3 152 36.5 3.1 N 2258 395 2018-07-05

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PSMN011-100YSF PSMN011-100YSFX
(934660618115)		 Withdrawn / End-of-life 11FS10Y SOT669
LFPAK56; Power-SO8
(SOT669) 		SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
PSMN011-100YSF PSMN011-100YSFX PSMN011-100YSF rohs rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (24)

文件名稱 標(biāo)題 類型 日期
PSMN011-100YSF NextPower 100V, 10.9 mΩ N-channel MOSFET in LFPAK56 package Data sheet 2019-05-30
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN90001 Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28
AN90003 LFPAK MOSFET thermal design guide Application note 2023-08-22
SOT669 3D model for products with SOT669 package Design support 2017-06-30
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2022-05-30
Reliability_information_t8_sot669 Reliability qualification information Quality document 2022-09-16
T8_SOT669_PSMN011-100YSF_Nexperia_Quality_document PSMN011-100YSF Quality document Quality document 2022-09-16
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN011-100YSF_RCthermal PSMN011-100YSF RC thermal design Thermal design 2019-04-26
PSMN011-100YSF PSMN011-100YSF thermal model Thermal model 2019-04-26
PSMN011-100YSF_Zth PSMN011-100YSF Zth thermal model Thermal model 2019-04-26
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
SOT669 3D model for products with SOT669 package Design support 2017-06-30
PSMN011-100YSF_RCthermal PSMN011-100YSF RC thermal design Thermal design 2019-04-26
PSMN011-100YSF PSMN011-100YSF thermal model Thermal model 2019-04-26
PSMN011-100YSF_Zth PSMN011-100YSF Zth thermal model Thermal model 2019-04-26
SOT669 3D model for products with SOT669 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.