可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
---|---|---|---|---|
PSMN012-100YS | PSMN012-100YS,115 | 934064395115 | SOT669 | 訂單產品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationAdvanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMN012-100YS | SOT669 | LFPAK56; Power-SO8 | Production | N | 1 | 100 | 12 | 175 | 60 | 19 | 64 | 130 | 129 | 3 | N | 3500 | 246 | 2011-02-10 |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
PSMN012-100YS | PSMN012-100YS,115 (934064395115) |
Active | 12100 |
LFPAK56; Power-SO8 (SOT669) |
SOT669 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT669_115 |
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
PSMN012-100YS | N-channel 100 V, 12 m? standard level MOSFET in LFPAK | Data sheet | 2018-04-03 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2022-05-30 |
SOT669_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-05-10 |
Reliability_information_t6_sot669 | Reliability qualification information | Quality document | 2022-10-13 |
T6_SOT669_PSMN012-100YS_Nexperia_Quality_document | PSMN012-100YS Quality document | Quality document | 2022-10-13 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PSMN012-100YS | Spice model PSMN012-100YS | SPICE model | 2011-11-30 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
PSMN012-100YS | PSMN012-100YS Thermal model | Thermal model | 2010-01-17 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
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文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
PSMN012-100YS | Spice model PSMN012-100YS | SPICE model | 2011-11-30 |
PSMN012-100YS | PSMN012-100YS Thermal model | Thermal model | 2010-01-17 |
SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
型號 | Orderable part number | Ordering code (12NC) | 狀態 | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
PSMN012-100YS | PSMN012-100YS,115 | 934064395115 | Active | SOT669_115 | 1,500 | 訂單產品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.