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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PSMN022-30PL

N-channel 30 V 22 m? logic level MOSFET

Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • High efficiency due to low switching and conduction losses

  • Suitable for logic level gate drive sources

Applications

  • DC-to-DC converters

  • Load switiching

  • Motor control

  • Server power supplies

參數(shù)類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN022-30PL SOT78 TO-220AB End of life N 1 30 22 34 175 30 1.4 4.4 9 41 10 1.7 N 447 96 2011-01-26

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PSMN022-30PL PSMN022-30PL,127
(934063985127)		 Discontinued / End-of-life PSMN022 30PL SOT78
TO-220AB
(SOT78) 		SOT78 SOT78_127

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
PSMN022-30PL PSMN022-30PL,127 PSMN022-30PL rohs rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (20)

文件名稱 標(biāo)題 類型 日期
PSMN022-30PL N-channel 30 V 22 mOhm logic level MOSFET Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN11172 Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Application note 2021-05-21
SOT78 3D model for products with SOT78 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT78 plastic, single-ended package (heatsink mounted, 1 mounting hole); 3 leads; 2.54 mm pitch; 15.6 mm x 10 mm x 4.4 mm body Package information 2020-04-21
Reliability_information_template_t6_sot78 Reliability Information T6 SOT78 Quality document 2023-03-24
T6_SOT78_PSMN022-30PL_Nexperia_Quality_document PSMN022-30PL Quality document Quality document 2023-03-23
PSMN022-30PL PSMN022-30PL SPICE model SPICE model 2011-01-26
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN022-30PL PSMN022-30PL Thermal model Thermal model 2011-04-04

支持

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模型

文件名稱 標(biāo)題 類型 日期
PSMN022-30PL PSMN022-30PL SPICE model SPICE model 2011-01-26
PSMN022-30PL PSMN022-30PL Thermal model Thermal model 2011-04-04
SOT78 3D model for products with SOT78 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.