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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PSMN027-100PS

N-channel 100V 26.8 m? standard level MOSFET in TO220.

Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

此產品已停產

Features and benefits

  • High efficiency due to low switching and conduction losses

  • Suitable for standard level gate drive

Applications

  • DC-to-DC converters

  • Load switching

  • Motor control

  • Server power supplies

參數類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN027-100PS SOT78 TO-220AB End of life N 1 100 26.8 175 37 9 30 103 91 3 N 1624 115 2010-09-02

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
PSMN027-100PS PSMN027-100PS,127
(934064326127)		 Discontinued / End-of-life PSMN027 100PS SOT78
TO-220AB
(SOT78) 		SOT78 SOT78_127

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PSMN027-100PS PSMN027-100PS,127 PSMN027-100PS rohs rhf
品質及可靠性免責聲明

文檔 (19)

文件名稱 標題 類型 日期
PSMN027-100PS N-channel 100 V, 26.8 mΩ standard level MOSFET in TO220 Data sheet 2018-04-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN11172 Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Application note 2021-05-21
SOT78 3D model for products with SOT78 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT78 plastic, single-ended package (heatsink mounted, 1 mounting hole); 3 leads; 2.54 mm pitch; 15.6 mm x 10 mm x 4.4 mm body Package information 2020-04-21
Reliability_information_template_t6_sot78 Reliability Information T6 SOT78 Quality document 2023-03-24
T6_SOT78_PSMN027-100PS_Nexperia_Quality_document PSMN027-100PS Quality document Quality document 2023-03-23
PSMN027-100PS PSMN027-100PS Spice model SPICE model 2011-11-30
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

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模型

文件名稱 標題 類型 日期
PSMN027-100PS PSMN027-100PS Spice model SPICE model 2011-11-30
SOT78 3D model for products with SOT78 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.