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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PSMN1R1-50SLH

N-channel 50 V, 1.18 mOhm, 280 A logic level MOSFET in LFPAK88 using NextPower-S3 Schottky-Plus technology

280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance industrial applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • 280 Amp continuous current capability

  • LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection

  • Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating

  • Ideal replacement for D2PAK and 10 x 12 mm leadless package types

  • Qualified to 175 °C

  • Avalanche rated, 100 % tested

  • Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

  • Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs

  • Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage

  • Narrow VGS(th) rating for easy paralleling and improved current sharing

  • Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions

Applications

  • Brushless DC motor control

  • Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies

  • Battery protection and Battery Management Systems (BMS)

  • Load switch

  • 10 cell lithium-ion battery applications (36 V ? 42 V)

參數(shù)類型

型號(hào) Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN1R1-50SLH SOT1235 LFPAK88 End of life N 1 50 1.18 175 280 20 86 190 375 1.78 N 13338 1276 2021-01-08

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PSMN1R1-50SLH PSMN1R1-50SLHX
(934661301115)		 Obsolete X1H1L50S SOT1235
LFPAK88
(SOT1235) 		SOT1235 REFLOW_BG-BD-1
暫無(wú)信息
PSMN1R1-50SLHAX
(934661301118)		 Obsolete X1H1L50S SOT1235_118

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
PSMN1R1-50SLH PSMN1R1-50SLHX PSMN1R1-50SLH rohs rhf
PSMN1R1-50SLH PSMN1R1-50SLHAX PSMN1R1-50SLH rohs rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (8)

文件名稱 標(biāo)題 類型 日期
PSMN1R1-50SLH N-channel 50 V, 1.18 mOhm, 280 A logic level MOSFET in LFPAK88 using NextPower-S3 Schottky-Plus technology Data sheet 2021-01-08
AN90003 LFPAK MOSFET thermal design guide Application note 2023-08-22
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK88_sot1235_mk plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body Marcom graphics 2019-04-10
SOT1235 plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body Package information 2022-05-30
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06

支持

如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.