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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PSMN1R2-25YLD

N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

  • 100% Avalanche tested at I(AS) = 169 A

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies

  • Superfast switching with soft-recovery

  • Low spiking and ringing for low EMI designs

  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C

  • Optimised for 4.5 V gate drive

  • Low parasitic inductance and resistance

  • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C

  • Wave solderable; exposed leads for optimal visual solder inspection

Applications

  • On-board DC:DC solutions for server and telecommunications

  • Secondary-side synchronous rectification in telecommunication applications

  • Voltage regulator modules (VRM)

  • Point-of-Load (POL) modules

  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components

  • Brushed and brushless motor control

  • Power OR-ing

參數(shù)類型

型號(hào) Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN1R2-25YLD SOT669 LFPAK56; Power-SO8 Production N 1 25 1.2 1.69 175 230 7 28 60.3 172 29.7 1.73 N 4327 1734 2016-03-22

封裝

型號(hào) 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PSMN1R2-25YLD PSMN1R2-25YLDX
(934069909115)		 Active 1D225L SOT669
LFPAK56; Power-SO8
(SOT669) 		SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

環(huán)境信息

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
PSMN1R2-25YLD PSMN1R2-25YLDX PSMN1R2-25YLD rohs rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (21)

文件名稱 標(biāo)題 類型 日期
PSMN1R2-25YLD N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Data sheet 2021-04-23
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2022-05-30
SOT669_115 LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation Packing information 2022-05-10
Reliability_information_t9_sot669 Reliability information t9_sot669 Quality document 2022-10-18
T9_SOT669_PSMN1R2-25YLD_Nexperia_Quality_document Quality document of T9_SOT669_PSMN1R2-25YLD Quality document 2022-10-18
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN1R2-25YLD PSMN1R2-25YLD SPICE model SPICE model 2016-04-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN1R2-25YLD_RC_Thermal_Model PSMN1R2-25YLD Thermal design model Thermal design 2021-01-18
PSMN1R2-25YLD PSMN1R2-25YLD Thermal model Thermal model 2016-04-13
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
PSMN1R2-25YLD PSMN1R2-25YLD SPICE model SPICE model 2016-04-13
PSMN1R2-25YLD_RC_Thermal_Model PSMN1R2-25YLD Thermal design model Thermal design 2021-01-18
PSMN1R2-25YLD PSMN1R2-25YLD Thermal model Thermal model 2016-04-13
SOT669 3D model for products with SOT669 package Design support 2017-06-30

訂購(gòu)、定價(jià)與供貨

型號(hào) Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購(gòu)買(mǎi)
PSMN1R2-25YLD PSMN1R2-25YLDX 934069909115 Active SOT669_115 1,500 訂單產(chǎn)品

樣品

作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。

如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購(gòu)部件

型號(hào) 可訂購(gòu)的器件編號(hào) 訂購(gòu)代碼(12NC) 封裝 從經(jīng)銷商處購(gòu)買(mǎi)
PSMN1R2-25YLD PSMN1R2-25YLDX 934069909115 SOT669 訂單產(chǎn)品