可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
---|---|---|---|---|
PSMN1R4-40YSH | PSMN1R4-40YSHX | 934663830115 | SOT1023 | 訂單產(chǎn)品 |
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Click here for more informationN-channel 40 V, 1.4 mOhm, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology
240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
240 A continuous ID(max) rating
Avalanche rated, 100% tested at IAS = 190 A
Strong SOA (linear-mode) rating
NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
Low QRR, QG and QGD for high system efficiency and low EMI designs
Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage
High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
Low parasitic inductance and resistance
High-performance synchronous rectification
DC-to-DC converters
High performance and high efficiency server power supply
Brushless DC motor control
Battery protection
Load-switch and eFuse
Inrush management, hotswap
型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMN1R4-40YSH | SOT1023 | LFPAK56E; Power-SO8 | Production | N | 1 | 40 | 1.4 | 175 | 240 | 9.3 | 68 | 333 | 34 | 3.1 | N | 5373 | 1361 | 2022-05-10 |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
PSMN1R4-40YSH | PSMN1R4-40YSHX (934663830115) |
Active | 1H4S40Y |
LFPAK56E; Power-SO8 (SOT1023) |
SOT1023 |
REFLOW_BG-BD-1
|
SOT1023_115 |
型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
---|---|---|---|---|
PSMN1R4-40YSH | PSMN1R4-40YSHX | PSMN1R4-40YSH |
文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
PSMN1R4-40YSH | N-channel 40 V, 1.4 mOhm, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Data sheet | 2023-10-22 |
AN90032 | Low temperature soldering, application study | Application note | 2022-02-22 |
SOT1023 | 3D model for products with SOT1023 package | Design support | 2017-06-29 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
LFPAK56_SOT1023_mk | plastic, single-ended surface-mounted package (LFPAK56); 4 leads; 1.27 mm pitch; 4.58 mm x 5.13 mm x 1.03 mm body | Marcom graphics | 2017-01-28 |
SOT1023 | plastic, single-ended surface-mounted package (LFPAK56E); 4 leads; 1.27 mm pitch | Package information | 2024-08-28 |
SOT1023_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-06-07 |
Reliability_information_t9_sot1023 | Reliability qualification information | Quality document | 2022-08-29 |
T9_SOT1023_PSMN1R4-40YSH_Nexperia_Quality_document | Product Quality Quick Reference Information | Quality document | 2022-08-29 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
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文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
SOT1023 | 3D model for products with SOT1023 package | Design support | 2017-06-29 |
型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
PSMN1R4-40YSH | PSMN1R4-40YSHX | 934663830115 | Active | SOT1023_115 | 1,500 | 訂單產(chǎn)品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.