可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PSMN1R9-80SSJ | PSMN1R9-80SSJJ | 934668818118 | SOT1235 | 訂單產(chǎn)品 |
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Click here for more informationPSMN1R9-80SSJ
N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88
In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally.
Small differences in VGS(th) for individual devices cause the MOSFET with the lowest VGS(th) to turn-on first, taking a larger share of the load current during the dynamic switching phase.
The difference in load current between individual MOSFETs (ΔID) can be significant often leading to differential heating and potential accelerated failure.
One method to reduce the ΔI between MOSFETs is to select devices with matched VGS(th), but testing & sorting MOSFETs with matched VGS(th) can be a difficult process. VGS(th) is typically measured at ΔID ≤ 1 mA and is influenced by temperature also.
ASFETs with enhanced dynamic current sharing are designed to show significantly improved current sharing with low ΔID when connected in parallel applications.
Features and benefits
Removes the need for VGS(th) matching
Low ΔID enhances current sharing in parallel applications
Reduced VGS(th) spread
Low RDSon
286 A continuous ID Max
Avalanche rated, 100% tested
Compact and Reliable 8x8 LFPAK88 package, qualified to 175 °C
Applications
Applications using MOSFETs in parallel
Applications utilizing MOSFETs with matched VGS(th)
High-power motor control
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN1R9-80SSJ | SOT1235 | LFPAK88 | Development | N | 1 | 80 | 1.9 | 175 | 286 | 6 | 272 | 500 | 103 | 2.25 | N | 24807 | 2823 | 2024-10-02 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSMN1R9-80SSJ | PSMN1R9-80SSJJ (934668818118) |
Development | X1J9S80S |
LFPAK88 (SOT1235) |
SOT1235 |
REFLOW_BG-BD-1
|
SOT1235_118 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSMN1R9-80SSJ | PSMN1R9-80SSJJ | PSMN1R9-80SSJ |
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文檔 (7)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSMN1R9-80SSJ | N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 | Data sheet | 2025-01-13 |
| SOT1235 | 3D model for products with SOT1235 package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK88_sot1235_mk | plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body | Marcom graphics | 2019-04-10 |
| SOT1235 | plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body | Package information | 2022-05-30 |
| SOT1235_118 | LFPAK88; Reel pack, SMD, 13"; Q1/T1 standard product orientation; Orderable part number ending ,118 or Z; Ordering code (12NC) ending 118 | Packing information | 2020-04-21 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
支持
如果您需要設(shè)計/技術(shù)支持，請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT1235 | 3D model for products with SOT1235 package | Design support | 2020-01-22 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PSMN1R9-80SSJ
N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88
從安世半導(dǎo)體購買
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