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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PSMN2R3-100SSJ

N-channel 100 V, 2.3 mOhm ASFET with enhanced dynamic current sharing in LFPAK88

In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally.

Small differences in VGS(th) for individual devices cause the MOSFET with the lowest VGS(th) to turn-on first, taking a larger share of the load current during the dynamic switching phase.

The difference in load current between individual MOSFETs (ΔID) can be significant often leading to differential heating and potential accelerated failure.

One method to reduce the ΔI between MOSFETs is to select devices with matched VGS(th), but testing & sorting MOSFETs with matched VGS(th) can be a difficult process. VGS(th) is typically measured at ΔID ≤ 1 mA and is influenced by temperature also.

ASFETs with enhanced dynamic current sharing are designed to show significantly improved current sharing with low ΔID when connected in parallel applications.

Features and benefits

  • Removes the need for VGS(th) matching

  • Low ΔID enhances current sharing in parallel applications

  • Reduced VGS(th) spread

  • Low RDSon

  • 255 A continuous ID Max

  • Avalanche rated, 100% tested

  • Compact and Reliable 8x8 LFPAK88 package, qualified to 175 °C

Applications

  • Applications using MOSFETs in parallel

  • Applications utilizing MOSFETs with matched VGS(th)

  • High-power motor control

參數類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN2R3-100SSJ SOT1235 LFPAK88 Development N 1 100 2.3 175 255 8 280 749 147 2.2 N 24840 2683 2023-05-24

封裝

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
PSMN2R3-100SSJ PSMN2R3-100SSJJ
(934661617118)
Development X2J3S10S SOT1235
LFPAK88
(SOT1235)
SOT1235 REFLOW_BG-BD-1
SOT1235_118

環境信息

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PSMN2R3-100SSJ PSMN2R3-100SSJJ PSMN2R3-100SSJ rohs rhf
品質及可靠性免責聲明

文檔 (7)

文件名稱 標題 類型 日期
PSMN2R3-100SSJ N-channel 100 V, 2.3 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 Data sheet 2024-12-06
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK88_sot1235_mk plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body Marcom graphics 2019-04-10
SOT1235 plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body Package information 2022-05-30
SOT1235_118 LFPAK88; Reel pack, SMD, 13"; Q1/T1 standard product orientation; Orderable part number ending ,118 or Z; Ordering code (12NC) ending 118 Packing information 2020-04-21
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06

支持

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模型

文件名稱 標題 類型 日期
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22

訂購、定價與供貨

型號 Orderable part number Ordering code (12NC) 狀態 包裝 Packing Quantity 在線購買

樣品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經銷商處購買
PSMN2R3-100SSJ PSMN2R3-100SSJJ 934661617118 SOT1235 訂單產品