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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PSMN3R2-30YLC

N-channel 30 V 3.5m? logic level MOSFET in LFPAK using NextPower technology

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

此產品已停產

Features and benefits

  • High reliability Power SO8 package, qualified to 175°C
  • Low parasitic inductance and resistance
  • Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
  • Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads

Applications

  • DC-to-DC converters
  • Load switching
  • Power OR-ing
  • Server power supplies
  • Sync rectifier

參數類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN3R2-30YLC SOT669 LFPAK56; Power-SO8 End of life N 1 30 3.5 4.55 175 100 4.1 14.2 29.5 92 19.5 1.53 N 2081 432 2011-04-07

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
PSMN3R2-30YLC PSMN3R2-30YLC,115
(934065193115)		 Obsolete 3C230L SOT669
LFPAK56; Power-SO8
(SOT669) 		SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PSMN3R2-30YLC PSMN3R2-30YLC,115 PSMN3R2-30YLC rohs rhf
品質及可靠性免責聲明

文檔 (20)

文件名稱 標題 類型 日期
PSMN3R2-30YLC N-channel 30 V, 3.5 mΩ logic level MOSFET in LFPAK using NextPower technology Data sheet 2018-04-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2022-05-30
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN3R2_30YLC PSMN3R2_30YLC Spice model SPICE model 2011-04-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN3R2-30YLC PSMN3R2-30YLC Thermal model Thermal model 2011-04-08
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
PSMN3R2_30YLC PSMN3R2_30YLC Spice model SPICE model 2011-04-12
PSMN3R2-30YLC PSMN3R2-30YLC Thermal model Thermal model 2011-04-08
SOT669 3D model for products with SOT669 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.