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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

PSMN3R4-30BL

N-channel 30 V 3.3 m? logic level MOSFET in D2PAK

Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • High efficiency due to low switching and conduction losses
  • Suitable for logic level gate drive sources

Applications

  • DC-to-DC converters
  • Load switiching
  • Motor control
  • Server power supplies

參數(shù)類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN3R4-30BL SOT404 D2PAK End of life N 1 30 3.3 3.8 175 100 8 31 64 114 28 1.7 N 3907 822 2012-03-19

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
PSMN3R4-30BL PSMN3R4-30BL,118
(934066329118)		 Withdrawn / End-of-life PSMN3R4 30BL SOT404
D2PAK
(SOT404) 		SOT404 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT404_118

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PSMN3R4-30BL PSMN3R4-30BL,118 PSMN3R4-30BL rohs rhf
品質(zhì)及可靠性免責聲明

文檔 (19)

文件名稱 標題 類型 日期
PSMN3R4-30BL N-channel 30 V 3.3 mOhm logic level MOSFET in D2PAK Data sheet 2017-04-20
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT404 3D model for products with SOT226 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
D2PAK_SOT404_mk plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Marcom graphics 2017-01-28
SOT404 plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2022-05-27
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN3R4-30BL PSMN3R4-30BL Thermal model Thermal model 2012-03-15
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設計/技術(shù)支持，請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
PSMN3R4-30BL PSMN3R4-30BL Thermal model Thermal model 2012-03-15
SOT404 3D model for products with SOT226 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.