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N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK
Standard level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment.
Features and benefits
- High efficiency due to low switching and conduction losses
- Improved dynamic avalanche performance
- Suitable for standard level gate drive
- I2PAK package for slimline adaptors & height constrained applications
Applications
- AC-to-DC power supply
- Synchronous rectification
- Motor control
- Slimline adaptors & chargers
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN6R3-120ES | SOT226 | I2PAK | End of life | N | 1 | 120 | 6.7 | 175 | 70 | 61.9 | 207.1 | 405 | 264.2 | 3 | N | 11384 | 534 | 2013-05-02 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSMN6R3-120ES | PSMN6R3-120ESQ (934067856127) |
Obsolete | PSMN6R3 120ES |
I2PAK (SOT226) |
SOT226 | 暫無信息 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSMN6R3-120ES | PSMN6R3-120ESQ | PSMN6R3-120ES |
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文檔 (11)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSMN6R3-120ES | N-channel 120 V, 6.7 mΩ standard level MOSFET in I2PAK | Data sheet | 2018-04-02 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| SOT226 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT226 | plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body | Package information | 2020-04-21 |
| PSMN6R3-120ES | PSMN6R3-120ES Spice model | SPICE model | 2013-05-21 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| PSMN6R3-120ES | PSMN6R3-120ES Thermal model | Thermal model | 2013-05-21 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSMN6R3-120ES | PSMN6R3-120ES Spice model | SPICE model | 2013-05-21 |
| PSMN6R3-120ES | PSMN6R3-120ES Thermal model | Thermal model | 2013-05-21 |
| SOT226 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PSMN6R3-120ES
N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK
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