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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PSMN8R7-100YSF

NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package

NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications.

此產品已停產

Features and benefits

  • Low Qrr for higher efficiency and lower spiking

  • Qualified to 175 °C

  • Low QG x RDSon FOM for high efficiency switching applications

  • Strong avalanche energy rating (Eas)

  • Avalanche rated and 100% tested

  • Ha-free and RoHS compliant LFPAK56 package

  • Wave-solderable LFPAK56 package

Applications

  • Synchronous rectifier in AC-DC and DC-DC

  • BLDC motor control

  • USB-PD and mobile fast-charge adapters

  • LED lighting

  • Full-bridge and half-bridge applications

  • Flyback and resonant topologies

參數類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN8R7-100YSF SOT669 LFPAK56; Power-SO8 End of life N 1 100 9 175 90 7.5 38.5 198 52.6 3.1 N 2758 532 2017-03-24

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
PSMN8R7-100YSF PSMN8R7-100YSFX
(934071221115)		 Withdrawn / End-of-life 8F7S10 SOT669
LFPAK56; Power-SO8
(SOT669) 		SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PSMN8R7-100YSF PSMN8R7-100YSFX PSMN8R7-100YSF rohs rhf
品質及可靠性免責聲明

文檔 (23)

文件名稱 標題 類型 日期
PSMN8R7-100YSF NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package Data sheet 2018-03-13
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN90001 Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28
AN90003 LFPAK MOSFET thermal design guide Application note 2023-08-22
SOT669 3D model for products with SOT669 package Design support 2017-06-30
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2022-05-30
Reliability_information_t8_sot669 Reliability qualification information Quality document 2022-09-16
T8_SOT669_PSMN8R7-100YSF_Nexperia_Quality_document PSMN8R7-100YSF Quality document Quality document 2022-09-20
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN8R7-100YSF PSMN8R7-100YSF SPICE model SPICE model 2017-07-19
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN8R7-100YSF_RCthermal PSMN8R7-100YSF Thermal model Thermal design 2017-07-19
PSMN8R7-100YSF PSMN8R7-100YSF Thermal model Thermal model 2017-07-19
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
SOT669 3D model for products with SOT669 package Design support 2017-06-30
PSMN8R7-100YSF PSMN8R7-100YSF SPICE model SPICE model 2017-07-19
PSMN8R7-100YSF_RCthermal PSMN8R7-100YSF Thermal model Thermal design 2017-07-19
PSMN8R7-100YSF PSMN8R7-100YSF Thermal model Thermal model 2017-07-19
SOT669 3D model for products with SOT669 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.