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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PXN013-30QLA

N-channel 30 V, 13 mOhm, logic level Trench MOSFET in MLPAK33

General purpose MOSFET for standard applications, 25 A, logic level N-channel enhancement mode Power MOSFET in MLPAK33 package.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Logic level compatibility

  • Trench MOSFET technology

  • Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)

Applications

  • Secondary side synchronous rectification

  • DC-to-DC converters

  • Battery Management System

  • Motor drive

  • Load switching

參數(shù)類型

型號(hào) Product status Release date
PXN013-30QLA End of life 2023-10-18

文檔

No documents available

支持

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.