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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

PXN2R7-30RLA

N-channel 30 V, 2.7 mOhm, logic level Trench MOSFET in MLPAK56

General purpose MOSFET for standard applications, 97 A, logic level N-channel enhancement mode Power MOSFET in MLPAK56 package.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Logic level compatibility

  • Trench MOSFET technology

  • Thermally efficient package in a small form factor (5.15 mm x 6.15 mm footprint)

Applications

  • Secondary side synchronous rectification

  • DC-to-DC converters

  • Battery Management System

  • Motor drive

  • Load switching

參數(shù)類型

型號 Product status Release date
PXN2R7-30RLA End of life 2023-10-18

文檔

No documents available

支持

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.