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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PXN4R6-30RLA

N-channel 30 V, 4.6 mOhm, logic level Trench MOSFET in MLPAK56

General purpose MOSFET for standard applications, 59 A, logic level N-channel enhancement mode Power MOSFET in MLPAK56 package.

此產品已停產

Features and benefits

  • Logic level compatibility

  • Trench MOSFET technology

  • Thermally efficient package in a small form factor (5.15 mm x 6.15 mm footprint)

Applications

  • Secondary side synchronous rectification

  • DC-to-DC converters

  • Battery Management System

  • Motor drive

  • Load switching

參數類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) Ptot [max] (W) Automotive qualified Release date
PXN4R6-30RLA SOT8038-1 MLPAK56 End of life N 1 30 4.6 150 59 30 N 2023-10-18

文檔 (2)

文件名稱 標題 類型 日期
SOT8038-1 3D model for products with SOT8038-1 package Design support 2024-07-12
SOT8038-1 plastic thermal enhanced surface mounted package;mini leads; 8 terminals; pitch 1.27 mm; 6 x 5 x 1.0 mm body Package information 2024-07-11

支持

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模型

文件名稱 標題 類型 日期
SOT8038-1 3D model for products with SOT8038-1 package Design support 2024-07-12

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.