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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

BAT54T

Single Schottky barrier diode

Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT416 (SC-75) ultra small Surface-Mounted Device (SMD) plastic package.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Low forward voltage: max. 400 mV
  • Low capacitance: max. 10 pF
  • Ultra small SMD plastic package
  • AEC-Q101 qualified

Applications

  • Ultra high-speed switching
  • Voltage clamping
  • Protection circuits
  • Blocking diode

參數(shù)類型

型號(hào) Package version Package name Size (mm) VR [max] (V) IF [max] (A) Nr of functions Configuration IR [max] (μA) Cd [max] (pF)
BAT54T SOT416 SC-75 1.6 x 0.75 x 0.9 30.0 0.2 single single 2.0 10.0

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào),(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
BAT54T BAT54T,115
(934063958115)
Obsolete SOT416
SC-75
(SOT416)
SOT416 SOT416_115

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
BAT54T BAT54T,115 BAT54T rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (5)

文件名稱 標(biāo)題 類型 日期
BAT54T Single Schottky barrier diode Data sheet 2009-12-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
BAT54T BAT54T SPICE model SPICE model 2012-07-22
BAT54T BAT54T SPICE model SPICE model 2024-10-14

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
BAT54T BAT54T SPICE model SPICE model 2012-07-22
BAT54T BAT54T SPICE model SPICE model 2024-10-14

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.