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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

BUK7Y07-30B

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Q101 compliant
  • Suitable for standard level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V Loads
  • Automotive systems
  • General purpose power switch
  • Motors, lamps and solenoids

參數(shù)類型

型號(hào) Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BUK7Y07-30B SOT669 LFPAK56; Power-SO8 End of life N 1 30 7 175 75 10.7 31 105 53 3 Y 1330 495 2011-01-27

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
BUK7Y07-30B BUK7Y07-30B,115
(934063315115)		 Obsolete SOT669
LFPAK56; Power-SO8
(SOT669) 		SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
BUK7Y07-30B BUK7Y07-30B,115 BUK7Y07-30B rohs rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (21)

文件名稱 標(biāo)題 類型 日期
BUK7Y07-30B N-channel TrenchMOS standard level FET Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2022-05-30
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
BUK7Y07_30B BUK7Y07-30B SPICE model SPICE model 2012-04-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
BUK7Y07-30B_RC_Thermal_Model BUK7Y07-30B Thermal design model Thermal design 2021-01-18
BUK7Y07-30B BUK7Y07-30B Thermal model Thermal model 2009-06-22
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
BUK7Y07_30B BUK7Y07-30B SPICE model SPICE model 2012-04-12
BUK7Y07-30B_RC_Thermal_Model BUK7Y07-30B Thermal design model Thermal design 2021-01-18
BUK7Y07-30B BUK7Y07-30B Thermal model Thermal model 2009-06-22
SOT669 3D model for products with SOT669 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.