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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

BUK961R4-30E

N-channel TrenchMOS logic level FET

Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • AEC Q101 compliant
  • Repetitive avalanche rated
  • Suitable for thermally demanding environments due to 175 °C rating
  • True Logic level gate with VGS(th) rating of greater than 0.5V at 175 °C

Applications

  • 12 V Automotive systems
  • Motors, lamps and solenoid control
  • Start-Stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching

參數(shù)類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BUK961R4-30E SOT404 D2PAK End of life N 1 30 1.2 1.4 175 120 39.2 349 112 1.7 Y 12100 1840 2012-03-27

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
BUK961R4-30E BUK961R4-30E,118
(934066491118)		 Obsolete BUK961R4 30E P**XXYY AZ Batch no SOT404
D2PAK
(SOT404) 		SOT404 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT404_118

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
BUK961R4-30E BUK961R4-30E,118 BUK961R4-30E rohs rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (21)

文件名稱 標(biāo)題 類型 日期
BUK961R4-30E N-channel TrenchMOS logic level FET Data sheet 2012-05-16
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT404 3D model for products with SOT226 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
D2PAK_SOT404_mk plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Marcom graphics 2017-01-28
SOT404 plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2022-05-27
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
BUK961R4-30E BUK961R4-30E Spice model SPICE model 2012-04-03
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
BUK961R4-30E_RC_Thermal_Model BUK961R4-30E Thermal design model Thermal design 2021-01-18
BUK961R4-30E BUK961R4-30E Thermal model Thermal model 2012-04-03
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設(shè)計/技術(shù)支持，請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
BUK961R4-30E BUK961R4-30E Spice model SPICE model 2012-04-03
BUK961R4-30E_RC_Thermal_Model BUK961R4-30E Thermal design model Thermal design 2021-01-18
BUK961R4-30E BUK961R4-30E Thermal model Thermal model 2012-04-03
SOT404 3D model for products with SOT226 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.