Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF) and improves the robustness expressed in a high IFSM.
外形圖
| 封裝版本 | 封裝名稱 | 封裝說明 | 參考 | 發行日期 |
|---|---|---|---|---|
| PSC1065B1-Q_POV | Bar die | Bare die product; 1.45 mm × 1.45 mm × 0.11 mm die size | 2024-04-23 |
相關文檔
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PSC1065B1-Q_POV | Bare die product; 1.45 mm × 1.45 mm × 0.11 mm die size | Package information | 2024-06-19 |
采用此封裝的產品
Diodes
| 型號 | 描述 | 快速訪問 |
|---|---|---|
| PSC1065B1-Q | 650 V, 10 A SiC Schottky diode in bare die for automotive applications |
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