久久国产加勒比精品无码,男女高潮又爽又黄又无遮挡,国产精品揄拍100视频,亚洲18色成人网站WWW

雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

74LVT16652ADGG

3.3 V 16-bit bus transceiver/register; 3-state

The 74LVT16652A is a high-performance BiCMOS product designed for VCC operation at 3.3 V. The device can be used as two 8-bit transceivers or one 16-bit transceiver.

Complimentary output enable (OEAB and OEBA) inputs are provided to control the transceiver functions. Select control (SAB and SBA) inputs are provided to select whether real-time or stored data is transferred. A LOW input level selects real-time data, and a HIGH input level selects stored data. The circuitry used for select control eliminates the typical decoding glitch that occurs in a multiplexer during the transition between stored and real-time data.

Data on the A or B bus, or both, can be stored in the internal flip-flops by LOW-to-HIGH transitions at the appropriate clock (CPAB or CPBA) inputs regardless of the levels on the select control or output enable inputs. When SAB and SBA are in real-time transfer mode, it is possible to store data without using the internal D-type flip-flops by simultaneously enabling OEAB and OEBA. In this configuration, each output reinforces its input. Thus, when all other data sources to the two sets of bus lines are at high- impedance, each set of bus lines remains at its last level configuration.

此產品已停產

Features and benefits

  • 16-bit bus interface
  • 3-state buffers
  • Output capability: +64 mA and -32 mA
  • TTL input and output switching levels
  • Input and output interface capability to systems at 5 V supply
  • Bus-hold data inputs eliminate the need for external pull-up resistors to hold unused inputs
  • Live insertion and extraction permitted
  • Power-up reset
  • Power-up 3-state
  • No bus current loading when output is tied to 5 V bus
  • Latch-up protection exceeds 500 mA per JESD78
  • ESD protection:
    • MIL STD 883 method 3015: exceeds 2000 V
    • Machine model: exceeds 200 V

Applications

參數類型

型號 Package name
74LVT16652ADGG TSSOP56

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
74LVT16652ADGG 74LVT16652ADGG,112
(935204700112)
Obsolete LVT16652A Standard Procedure Standard Procedure SOT364-1
TSSOP56
(SOT364-1)
SOT364-1 SSOP-TSSOP-VSO-WAVE
暫無信息
74LVT16652ADGG,118
(935204700118)
Obsolete LVT16652A Standard Procedure Standard Procedure SOT364-1_118
74LVT16652ADGGS
(935204700512)
Obsolete LVT16652A Standard Procedure Standard Procedure 暫無信息
74LVT16652ADGGY
(935204700518)
Obsolete LVT16652A Standard Procedure Standard Procedure 暫無信息

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74LVT16652ADGG 74LVT16652ADGG,112 74LVT16652ADGG rohs rhf rhf
74LVT16652ADGG 74LVT16652ADGG,118 74LVT16652ADGG rohs rhf rhf
74LVT16652ADGG 74LVT16652ADGGS 74LVT16652ADGG rohs rhf rhf
74LVT16652ADGG 74LVT16652ADGGY 74LVT16652ADGG rohs rhf rhf
品質及可靠性免責聲明

文檔 (7)

文件名稱 標題 類型 日期
74LVT16652A 3.3 V 16-bit bus transceiver/register; 3-state Data sheet 2005-01-11
SOT364-1 3D model for products with SOT364-1 package Design support 2020-01-22
lvt16652a lvt16652a IBIS model IBIS model 2013-04-09
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT364-1 plastic, thin shrink small outline package; 56 leads; 0.5 mm pitch; 14 mm x 6.1 mm x 1.2 mm body Package information 2022-06-23
lvt16 lvt16 Spice model SPICE model 2013-05-07
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
lvt16652a lvt16652a IBIS model IBIS model 2013-04-09
lvt16 lvt16 Spice model SPICE model 2013-05-07
SOT364-1 3D model for products with SOT364-1 package Design support 2020-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.