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Click here for more informationPBSS3540E
40 V, 500 mA PNP low VCEsat (BISS) transistor
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.
NPN complement: PBSS2540E.
Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- AEC-Q101 qualified
Applications
- DC-to-DC conversion
- MOSFET gate driving
- Motor control
- Charging circuits
- Low power switches (e.g. motors, fans)
參數(shù)類型
| 型號(hào) | Package version | Package name | Size (mm) | channel type (e) | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | fT [min] (MHz) |
|---|---|---|---|---|---|---|---|---|---|
| PBSS3540E | SOT416 | SC-75 | 1.6 x 0.75 x 0.9 | PNP | 150.0 | -40.0 | -500.0 | 200.0 | 100.0 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS3540E | PBSS3540E,115 (934059171115) |
Obsolete |
SC-75 (SOT416) |
SOT416 | SOT416_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS3540E | PBSS3540E,115 | PBSS3540E |
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文檔 (6)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSS3540E | 40 V, 500 mA PNP low VCEsat (BISS) transistor | Data sheet | 2010-01-18 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT416 | plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body | Package information | 2025-01-31 |
| PBSS3540E | PBSS3540E SPICE model | SPICE model | 2024-08-27 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSS3540E | PBSS3540E SPICE model | SPICE model | 2024-08-27 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS3540E
40 V, 500 mA PNP low VCEsat (BISS) transistor
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