可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| GAN039-650NBB | GAN039-650NBBHP | 934662151128 | SOT8000 | 訂單產品 |
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Click here for more informationGAN039-650NBB
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Features and benefits
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Simplified driver design as standard level MOSFET gate drivers can be used:
0 V to 12 V drive voltage
Gate threshold voltage VGSth of 4 V
Robust gate oxide with ±20 V VGS rating
High gate threshold voltage of 4 V for gate bounce immunity
Low body diode Vf for reduced losses and simplified dead-time adjustments
Transient over-voltage capability for increased robustness
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CCPAK package technology:
Improved reliability, with reduced Rth(j-mb) for optimal cooling
Lower inductances for lower switching losses and EMI
150 °C maximum junction temperature
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joints
Applications
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
參數類型
| 型號 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
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| GAN039-650NBB | SOT8000 | CCPAK1212 | Production | cascode | N | 1 | 650 | 39 | 150 | 58.5 | 5 | 26 | 250 | 187 | 3.9 | N | 1980 | 144 | 2020-07-30 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GAN039-650NBB | GAN039-650NBBHP (934662151128) |
Active | 039INBB |
CCPAK1212 (SOT8000) |
SOT8000 | 暫無信息 |
Boards
| Part number | Description | Type | Quick links | Shop link |
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描述 The H-bridge circuit is a full bridge DC-to-DC converter allowing operation of a brushed DC motor (48 V max, 12 V min, 5 A max). The control circuit operates with input voltages from 12 - 48 V for motors up to 250 W. The key feature of this design is that all electronic functions are designed with automotive qualified Nexperia discretes, MOSFETs and logic components (cost-effective, no microcontroller or software needed). In addition this H-bridge motor controller PCB allows the user to choose between three Nexperia MOSFET package options (LFPAK33, LFPAK56D or LFPAK56).
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類型 Reference design
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描述 The NX-HB-GAN039-BSCUL bottom-side cooled half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 KW or more, dependent upon cooling, ambient temperature and switching frequency. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.
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類型 Evaluation board
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Shop link
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Series
文檔 (16)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| GAN039-650NBB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package | Data sheet | 2024-05-28 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
| AN90030_translated | ハーフブリッジ?トポロジーにおけるNexperia製GaN FETの並列 | Application note | 2023-04-03 |
| AN90053 | Advanced SPICE models for Nexperia cascode Gallium Nitride (GaN) FETs | Application note | 2024-05-31 |
| SOT8000 | 3D model for products with SOT8000 package | Design support | 2023-02-07 |
| SOT8000 | Plastic, surface mounted copper clip package (CCPAK1212);13 terminals; 2.0 mm pitch, 12 mm x 9.4 mm x 2.5 mm body | Package information | 2024-04-18 |
| GAN039-650NxB_models_LTspice | GAN039-650NxB LTspice model | SPICE model | 2023-11-28 |
| GAN039-650NxB_models_SIMetrix | GAN039-650NxB SIMetrix SPICE model | SPICE model | 2023-11-28 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| UM90007 | NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs | User manual | 2024-08-21 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮書: 功率GaN技術： 高效功率轉換的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
支持
如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| GAN039-650NxB_models_LTspice | GAN039-650NxB LTspice model | SPICE model | 2023-11-28 |
| GAN039-650NxB_models_SIMetrix | GAN039-650NxB SIMetrix SPICE model | SPICE model | 2023-11-28 |
| SOT8000 | 3D model for products with SOT8000 package | Design support | 2023-02-07 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態 | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| GAN039-650NBB | GAN039-650NBBHP | 934662151128 | Active | 暫無信息 | 1,000 | 訂單產品 |
樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GAN039-650NBB
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
從安世半導體購買
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