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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PMP5501G

此產(chǎn)品已停產(chǎn)

參數(shù)類型

型號(hào) Package version Package name Size (mm)
PMP5501G SOT353 TSSOP5 2.1 x 1.25 x 0.95

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào)，（訂購碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PMP5501G PMP5501G,115
(934059021115)		 Obsolete R4% empty empty SOT353
TSSOP5
(SOT353) 		SOT353 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT353_115
PMP5501G,135
(934059021135)		 Obsolete R4% empty empty SOT353_135

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
PMP5501G PMP5501G,115 PMP5501G rohs rhf rhf
PMP5501G PMP5501G,135 PMP5501G rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (8)

文件名稱 標(biāo)題 類型 日期
SOT353 3D model for products with SOT353 package Design support 2019-01-18
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
TSSOP5_SOT353_mk plastic, surface-mounted package; 5 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body Marcom graphics 2017-01-28
SOT353 plastic, surface-mounted package; 5 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body Package information 2022-05-31
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMP5501G PMP5501G SPICE model SPICE model 2024-08-27
MAR_SOT353 MAR_SOT353 Topmark Top marking 2013-06-03
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
PMP5501G PMP5501G SPICE model SPICE model 2024-08-27
SOT353 3D model for products with SOT353 package Design support 2019-01-18

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.